Transistors

1
Publication date: March 2003 SJC00016BED
2SA1309A

Silicon PNP epitaxial planar type

For low-frequency amplification
Complementary to 2SC3311A
■Features
•High forward current transfer ratio hFE
•Allowing supply with the radial taping
•Optimum for high-density mounting
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −60 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−100 mA
Peak collector current ICP −200 mA
Collector power dissipation PC300 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7V
Collector-base cutoff current (Emitter open)
ICBO VCB = −10 V, IE = 0 −100 nA
Collector-emitter cutoff current (Base open)
ICEO VCE = −10 V, IB = 0 −1µA
Forward current transfer ratio *hFE VCE = −10 V, IC = −2 mA 160 460
Collector-emitter saturation voltage VCE(sat) IC = −50 mA, IB = −5 mA − 0.3 V
Transition frequency fTVCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
231
+0.20
–0.10
0.45+0.20
–0.10
7.6
3.0±0.2
(0.8)(0.8)
15.6±0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
Rank Q R S No rank
hFE 160 to 260 210 to 340 290 to 460 160 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).