
2SJC00016BED
VCE(sat) IChFE ICfT IE
PC TaIC VCE IC VBE
Cob VCB
0 16040 12080
0
500
400
300
200
100
Collector power dissipation PC (mW)Ambient temperature Ta (°C)0−12−10−8−2−6−4
0
−120
−100
−80
−60
−40
−20
T
a
= 25°C
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
I
B
= −300 µA
Collector current IC (mA)Collector-emitter voltage VCE (V)0−2.0−1.6− 0.4 −1.2− 0.8
0
−240
−200
−160
−120
−80
−40
V
CE
= −5 V
T
a
= 75°C−25°C
25°C
Base-emitter voltage VBE (V)Collector current IC (mA)−1−10 −100
−1000
− 0.001
− 0.01
− 0.1
−1
−10 I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat)
(V)Collector current IC
(mA)−1−10 −100
−1000
0
600
500
400
300
200
100
V
CE
= −5 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC (mA)− 0.1 −1−10 −100
0
160
120
40
100
140
80
20
60
V
CB
= −10 V
T
a
= 25°C
Transition frequency fT (MHz)
Emitter current IE (mA)−1−10 −100
0
10
8
6
4
2
IE = 0
f = 1 MHz
Ta = 25°C
Collector-base voltage VCB (V)