Transistors

1
Publication date: November 2004 SJC00312BED
2SA2161J

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC6037J
Features
Low collector-emitter saturation voltage VCE(sat)
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 12 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC500 mA
Peak collector current ICP 1A
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg 55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 12 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5V
Collector-base cutoff current (Emitter open)
ICBO VCB = 15 V, IE = 0 0.1 µA
Forward current transfer ratio hFE VCE = 2 V, IC = 10 mA 270 680
Collector-emitter saturation voltage VCE(sat) IC = 200 mA, IB = 10 mA 250 mV
Transition frequency fTVCB = 2 V, IE = 10 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 4.5 pF
(Common base, input open circuited)
Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Marking Symbol: 2U
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1: Base
2: Emitter
3: Collector
EIAJ: SC-89, JEDEC: SOT-490
SSMini3-F1 Package
0.27±0.02
3
12
0.12+0.03
–0.01
0.80±0.05(0.80)
0.85
1.60±0.05
0 to 0.02
0.10 max.
0.70+0.05
–0.03
(0.375)
1.60+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05
–0.03
This product complies with the RoHS Directive (EU 2002/95/EC).