
2SJC00312BED
VCE(sat) IChFE ICCob VCB
PC TaIC VCE IC VBE
020 40 60 80 100 120 1400
20
406080100120140Collector power dissipation PC (mW)Ambient temperature Ta (°C)0−10−20−30−40−50−60−700− 0.5 −1.0 −1.5 −2.0 −2.5 −3.0Collector current I
C
(mA)
Collector-emitter voltage
VCE (V)
IB = −160 µA −140 µA −120 µA −100 µA −80 µA−60 µA−40 µA−20 µATa
= 25°C0−1.4−1.2−1.0− 0.8− 0.2 − 0.6− 0.4
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
Base-emitter voltage VBE (V)Collector current IC
(mA)V
CE
= −2 V
T
a
= 85°C−25°C
25°C
−1
000−100−10−1− 0.1
− 0.1
− 0.01
−1
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)T
a
= 85°C
25°C
−25°C
I
C
/ I
B
= 20
−1−10 −100−10000
600500400300200100Forward current transfer ratio hFE
Collector current IC (mA)Ta = 85°C25°C−25°CVCE = −2 V5100100101Collector-base voltage VCB (V)Collector output capacitance (Common base, input open circuited) Cob
(pF)f = 1 MHzTa
= 25°C