Transistors

Publication date : October 2008 SJC00418AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1030A

Silicon PNP epitaxial planar type

For low-frequency amplification
Complementary to 2SD1423A
Features
Optimum for high-density mounting
Allowing supply with the radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –60 V
Collector-emitter voltage (Base open) VCEO –50 V
Emitter-base voltage (Collector open) VEBO –7 V
Collector current IC– 0.5 A
Peak collector current ICP –1 A
Collector power dissipation PC300 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –60 V
Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V
Emitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –7 V
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 – 0.1 mA
Collector-Emitter cutoff current (Base open) ICEO VCE = –20 V, IB = 0 –1 mA
Forward current transfer ratio hFE1 *VCE = –10 V, IC = –150 mA 85 340
hFE2 VCE = –10 V, IC = –500 A 40
Collector-emitter saturation voltage VCE(sat) IC = –300 mA, IB = –30 mA – 0.35 – 0.60 V
Transition frequency fTVCB = –10 V, IE = 50 mA, f = 200 MHz 120 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, IE = 0, f = 1 MHz 3.5 15.0 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
Package
Code
NS-B1
Pin Name
1. Emitter
2. Collector
3. Base