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2SB1030A manual
NS-B1
1
3
4
4
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4 pages, 441.67 Kb
2SB1030A
SJC00418AED
3
This product
complies wi
th the RoHS
Directive (E
U 2002/95/EC
).
NS-B1
Unit: mm
(2.5)
(2.5)
4.0
±
0.2
3.0
±
0.2
(0.8)
(0.8)
7.6
15.6
±
0.5
0.75max.
0.45
1
2
3
0.45
2.0
±
0.2
0.7
±
0.1
+0.20
−
0.10
+0.20
−
0.10
Contents
Main
Transistors
2SB1030A
Silicon PNP epitaxial planar type
For low-frequency amplication Complementary to 2SD1423A Features
Absolute Maximum Ratings Ta = 25C
Electrical Characteristics Ta = 25C3C
2SB1030A
2
Collector output capacitance
Collector-base voltage VCB (V)
VCE (V)
NS-B1