Transistors
1
Publication date: March 2003 SJC00078BED
2SB1320ASilicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1991A
■Features
•High forward current transfer ratio hFE
•Allowing supply with the radial taping
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −60 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−100 mA
Peak collector current ICP −200 mA
Collector power dissipation PC400 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7V
Collector-base cutoff current (Emitter open)
ICBO VCB = −20 V, IE = 0 −1µA
Collector-emitter cutoff current (Base open)
ICEO VCE = −20 V, IB = 0 −1µA
Forward current transfer ratio *hFE VCE = −10 V, IC = −2 mA 160 460
Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA −1V
Transition frequency fTVCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R S No-rank
hFE 160 to 260 210 to 340 290 to 460 160 to 460
Product of no-rank is not classified and have no marking symbol for rank.
6.9
±0.1
2.5
±0.1
0.45
1.05
±0.05
2.5
±0.5
123
2.5
±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.8)
(1.0)(0.85)
3.5
±0.1
14.5
±0.5
(0.7) (4.0)
0.65 max.
Unit: mm
1: Emitter
2: Collector
3: Base
MT-1-A1 Package