2SB1320A
3
SJC00078BED
h Parameter IEh Parameter VCB ICBO Ta
Cre VCE NF IENF IE
Collector-emitter voltage VCE (V)
06543210−30−5−25−10 −20−15Reverse transfer capacitance Cre (pF)
(Common emitter)
IE = 1 mAf = 10.7 MHzTa = 25°CNoise figure NF (dB)Emitter current IE
(mA)0
6
5
4
3
2
1
0.01 0.1 1 10
V
CB
= −5 V
f = 1 kHz
R
g
= 2 kΩ
T
a
= 25°C
0.1
110
0
4
8
12
20
18
14
10
6
2
16
Noise figure NF (dB)
Emitter current IE
(mA)V
CB
= −5 V
R
g
= 50 kΩ
T
a
= 25°C
f = 100 Hz
10 kHz
1 kHz
1
10
100
110
0.1
hfe
hoe (µS)
hie (kΩ)
hre (×10−4)
VCB = −5 V
f = 270 Hz
Ta = 25°C
h ParameterEmitter current IE (mA)1
−1
10
100
−10 −100
hfe
hoe (µS)
hie (kΩ)
hre (×10−4)
h ParameterCollector-base voltage VCB (V)IE = −2 mA
f = 270 Hz
Ta = 25°C
1
10
100
ICBO (Ta)ICBO (Ta = 25°C)Ambient temperature Ta (°C)0 1507525 12550 100
VCB = −10 V