Transistors
1
Publication date: March 2003 SJC00079BED
2SB1321ASilicon PNP epitaxial planar type
For low-frequency output amplification and driver amplification
Complementary to 2SD1992A
■Features
•Allowing supply with the radial taping
•Large collector power dissipation PC (600 mW)
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −60 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC− 0.5 A
Peak collector current ICP −1A
Collector power dissipation PC600 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7V
Collector-base cutoff current (Emitter open)
ICBO VCB = −20 V, IE = 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = −20 V, IB = 0 −1µA
Forward current transfer ratio hFE1 *2VCE = −10 V, IC = −10 mA 85 340
hFE2 *1VCE = −10 V, IC = −500 mA 40
Collector-emitter saturation voltage VCE(sat) IC = −300 mA, IB = −30 mA − 0.35 − 0.60 V
Transition frequency fTVCB = −10 V, IE = 10 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2:Rank classification
Rank Q R S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no marking symbol for rank.
6.9
±0.1
2.5
±0.1
0.45
1.05
±0.05
2.5
±0.5
123
2.5
±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.8)
(1.0)(0.85)
3.5
±0.1
14.5
±0.5
(0.7) (4.0)
0.65 max.
Unit: mm
1: Emitter
2: Collector
3: Base
MT-1-A1 Package