
2SJC00079BED
VCE(sat) ICVBE(sat) IChFE IC
PC TaIC VCE IC IB
fT IECob VCB VCER RBE
0
0 16040 12080
200
600
400
800
Ambient temperature Ta (°C)Collector power dissipation PC (mW)0 –12–2 –10–4 –8–6
0
−1.2
−1.0
−
0.8
−
0.6
−
0.4
−
0.2
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
I
B
= −10 mA
Collector-emitter voltage VCE (V)Collector current I
C
(A)
T
a
= 25°C
0−10−8−6−4−2
0
−
0.8
−
0.6
−
0.2
−
0.5
−
0.7
−
0.4
−
0.1
−
0.3
Base current IB (mA)
Collector current I
C
(A)
V
CE
= −10 V
T
a
= 25°C
−1
−10
−100
−1−10
Ta = 75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (A)IC / IB = 10
− 0.01
− 0.01
− 0.1
− 0.1
−1
−10
−100
−1−10
Ta = −25°C
75°C
25°C
− 0.01
− 0.1
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC (A)IC / IB = 10
− 0.01
− 0.1
0
600
500
400
300
200
100
−1−10
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio hFE
V
CE
= −10 V
− 0.01
− 0.1
Collector current IC
(A)1 10 100
0
240
200
160
120
80
40
Transition frequency fT (MHz)
Emitter current IE
(mA)VCB = −10 V
Ta = 25°C
0
−1
24
20
16
12
8
4
−10 −100
Collector-base voltage VCB (V)IE = 0
f = 1 MHz
Ta = 25°C
Collector output capacitance (Common base, input open circuited) Cob (pF)1 10 100 1
000
0
−120
−100
−80
−60
−40
−20
Base-emitter resistance RBE (kΩ)I
C
= −2 mA
T
a
= 25°C
Collector-emitter voltage (Resistor between B and E) VCER (V)