1
Transistors
Publication date: June 2006 SJC00116CED
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■Features
•High transition frequency fT
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 030 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 03V
Base-emitter voltage VBE VCB = 10 V, IE = −2 mA 720 mV
Forward current transfer ratio hFE VCB = 10 V, IE = −2 mA 25 250
Transition frequency *fTVCB = 10 V, IE = −15 mA, f = 200 MHz 800 1
300 1
600 MHz
Reverse transfer capacitance Crb VCE = 6 V, IC = 0, f = 1 MHz 0.8 pF
(Common base)
Reverse transfer capacitance Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1.0 1.5 pF
(Common emitter)
Power gain GPVCB = 10 V, IE = −1 mA, f = 200 MHz 20 dB
Unit: mm
■Electrical Characteristics Ta = 25°C ± 3°C
1: Base
2: Emitter
3: Collector
JEITA: SC-59A
Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Marking Symbol: R
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank T S No-rank
fT800 to 1
400 1
000 to 1
600 800 to 1
600
Marking symbol RT RS R
Product of no-rank is not classified and have no indication for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).