2SC2480
2SJC00116CED
IB VBE IC VBE hFE IC
PC TaIC VCE IC IB
VCE(sat) ICfT IECre VCE
0 16040 12080
0
240
200
160
120
80
40
Ambient temperature Ta (°C)
Collector power dissipation PC (mW)
0
24
20
16
12
8
4
0481216
I
B
= 300 µA
50 µA
100 µA
150 µA
200 µA
250 µA
Collector-emitter voltage VCE (V)
Collector current IC (mA)
T
a
= 25°C
0
0 500400300200100
24
20
16
12
8
4
Base current IB (µA)
Collector current IC (mA)
VCE = 10 V
Ta = 25°C
0
400
350
300
250
200
150
100
50
0 2.01.61.20.80.4
VCE = 10 V
Ta = 25°C
Base-emitter voltage VBE (V)
Base current IB (µA)
0
0 2.01.61.20.80.4
60
50
40
30
20
10
VCE = 10 V
Ta = 75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current IC (mA)
0
0.1
240
200
160
120
80
40
1 10 100
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
V
CE
= 10 V
Collector current I
C
(mA)
0.01
0.1
0.1
1
10
100
1 10 100
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
I
C
/ I
B
= 10
T
a
= 75°C
25°C
–25°C
− 0.1 −1−10 −100
0
1 600
1 400
1 200
1 000
800
600
400
200
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
V
CB
= 10 V
T
a
= 25°C
0
2.4
2.0
1.6
1.2
0.8
0.4
0.1 1 10 100
Collector-emitter voltage VCE (V)
I
C
= 1 mA
f = 10.7 MHz
T
a
= 25°C
Reverse transfer capacitance C
re
(pF)
(Common emitter)
This product complies with the RoHS Directive (EU 2002/95/EC).