Transistors
1
Publication date: February 2004 SJC00136CED
2SC3757Silicon NPN epitaxial planar type
For high-speed switching
■Features
•Low collector-emitter saturation voltage VCE(sat)
•Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 15 V, IE = 0 0.1 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 4 V, IC = 0 0.1 µA
Forward current transfer ratio *hFE VCE = 1 V, IC = 10 mA 60 200
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA 0.17 0.25 V
Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA 1.0 V
Transition frequency fTVCB = 10 V, IE = −10 mA, f = 200 MHz 450 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 2 6 pF
(Common base, input open circuited)
Turn-on time ton
Refer to the switching time measurement
17 ns
Turn-off time toff circuit 17 ns
Storage time tstg 10 ns
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 40 V
Collector-emitter voltage (E-B short) VCES 40 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC100 mA
Peak collector current ICP 300 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Marking Symbol: 2Y
0.40
+0.10
–0.05
(0.65) 1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank Q R
hFE 60 to 120 90 to 200
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification