
2SJC00136CED
hFE ICfT IECob VCB
IC VCE VCE(sat) ICVBE(sat) IC
220 Ω
0.1 µF
50 Ω
V
CC
= 3 V
V
OUT
3.3 kΩ
50 Ω
V
IN
= 10 V
3.3 kΩ
V
BB
= −3 V
V
IN
V
OUT
t
on
90%
10%
90%
10%
t
off
(Waveform at A)V
IN
V
OUT
10%
10%
t
stg
910 Ω
0.1 µF
0.1 µF
A
90 Ω
V
CC
= 10 V
V
OUT
500 Ω
50 Ω
V
IN
= 10 V
500 Ω
1 kΩ
V
BB
= 2 V
t
on
, t
off
test circuit t
stg
test circuit
Switching time measurement circuit
PC Ta
0 16040 1208002402001601208040Collector power dissipation P
C
(mW)
Ambient temperature Ta
(°C)0 1.21.00.80.2 0.60.4012010080604020Ta
= 25°C2.5 mA2.0 mA1.5 mA1.0 mA0.5 mAIB
= 3.0 mACollector current IC (mA)Collector-emitter voltage VCE (V)0.1 1 10 1000.010.1110100 IC
/ IB
= 10Ta
= 75°C25°C−25°CCollector-emitter saturation voltage V
CE(sat)
(V)
Collector current IC
(mA)1 10 100 10000.010.1110100Ta = −25°C25°C75°CBase-emitter saturation voltage VBE(sat) (V)Collector current IC (mA)0.1 1 10 1000600500400300200100VCE
= 1 VTa
= 75°C25°C−25°CForward current transfer ratio hFE
Collector current IC
(mA)−1−10 −100 −10000600500400300200100VCB
= 10 VTa
= 25°CTransition frequency fT
(MHz)Emitter current IE
(mA)1 10 1000654321IE
= 0f = 1 MHzTa
= 25°CCollector-base voltage VCB (V)Collector output capacitance (Common base, input open circuited) Cob
(pF)