Transistors

Publication date : November 2008 SJC00427BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SA2021G
Features
High forward current transfer ratio hFE
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7 V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 mA
Forward current transfer ratio hFE1 VCE = 10 V, IC = 2 mA 180 390
hFE2 * VCE = 2 V, IC = 100 mA 90
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V
Transition frequency fTVCB = 10 V, IE = –2 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
Cre VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Package
Code
SSSMini3-F2
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 3F