2SC5609G 2 SJC00427BED
This product complies with the RoHS Directive (EU 2002/95/EC).
IC VBE IB VBE VCE(sat) IC
0 40 12080
0
140
40
60
20
100
120
80
2SD5609G_PC-Ta
Collector power dissipation PC (mW)
Ambient temperature Ta (°C)
0 4 8 12
0
10
20
30
40
50
2SC5609G_IC-VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Ta = 25°C
60 µA
100 µA
80 µA
120 µA
140 µA
IB = 160 µA
40 µA
20 µA
0 0.2 0.6 0.8 1.00.4 1.2
0
20
40
60
80
100
160
140
120
180
2SC5609G_IC-IB
Collector current IC (mA)
Base current IB (V)
VCE = 10 V
Ta = 25°C
0 0.40.2 0.80.6 1.0
0
40
20
60
100
80
120
2SC5609G_IC-VBE
Collector current IC (mA)
Base-emitter voltage VBE (V)
Ta = 75°C
25°C
−25°C
0 0.40.2 0.80.6
0
40
20
60
80
100
2SC5609G_IB-VBE
Base current IB (mA)
Base-emitter voltage VBE (V)
VCE = 10 V
1 10 100 1
000
0.01
0.1
1
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
2SC5609G_VCE(sat)-IC
IC /IB = 10
Ta = 75°C
25°C
−25°C
1 10 100
1
000
0
320
400
80
240
160
Collector current IC (mA)
Forward current transfer ratio hFE
2SC5609G_hFE-IC
VCE = 10 V
Ta = 75°C
25°C
−25°C
hFE IC
PC Ta IC VCE IC IB