Transistors
1
Publication date: January 2003 SJC00200BED
2SD0965 (2SD965)
Silicon NPN epitaxial planar type
For low-frequency power amplification
For stroboscope
■Features
•Low collector-emitter saturation voltage VCE(sat)
•Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 40 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC5A
Peak collector current ICP 8A
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 020V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 07V
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 10 V, IB = 01µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 7 V, IC = 0 0.1 µA
Forward current transfer ratio hFE1 *VCE = 2 V, IC = 0.5 A 230 600
hFE2 VCE = 2 V, IC = 1 A 150
Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.1 A 0.28 1.00 V
Transition frequency fTVCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz
Collector output capacitance Cob VCB = 20 V, IE = 0, f = 1 MHz 26 50 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Rank Q R
hFE1 230 to 380 340 to 600
Note) The part number in the parenthesis shows conventional part number.