
2SJC00200BED
VCE(sat) ICVBE(sat) IChFE IC
PC TaIC VCE IC VBE
fT IECob VCB Safe operation area
0 16040 12080 14020 10060
0
1000
800
600
400
200
Collector power dissipation PC (mW)Ambient temperature Ta (°C)0 2.42.01.60.4 1.20.8
0
2.4
2.0
1.6
1.2
0.8
0.4
T
a
= 25°C
I
B
= 7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
0 2.01.60.4 1.20.8
0
6
5
4
3
2
1
V
CE
= 2 V
T
a
= 75°C−25°C
25°C
Base-emitter voltage VBE
(V)Collector current IC
(A)0.01 0.1 1 10
0.001
0.01
0.1
1
10
T
a
= 75°C
25°C
−25°C
I
C
/ I
B
= 30
Collector-emitter saturation voltage VCE(sat)
(V)Collector current I
C
(A)
0.01 0.1 1 10
0.01
0.1
1
10
100 I
C
/ I
B
= 30
T
a
= −25°C
25°C
75°C
Base-emitter saturation voltage VBE(sat)
(V)Collector current I
C
(A)
0.01 0.1 1 10
0
600
500
400
300
200
100
V
CE
= 2 V
T
a
= 25°C
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC
(A)− 0.01 − 0.1 −1−10
0
400
300
100
200
VCB = 6 V
Ta = 25°C
Transition frequency fT (MHz)
Emitter current IE (A)1 10 100
0
100
80
60
40
20
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)Collector output capacitance (Common base, input open circuited) Cob (pF)0.1 1 10 100
0.01
0.1
1
10
100 Single pulse
T
a
= 25°C
t = 10 ms
t = 1 s
I
CP
I
C
Collector current I
C
(A)
Collector-emitter voltage V
CE