Transistors

1
Publication date: April 2003 SJC00222BED
2SD1450

Silicon NPN epitaxial planar type

For low-frequency amplification
■Features
•Optimum for high-density mounting
•Allowing supply with the radial taping
•Low collector-emitter saturation voltage VCE(sat)
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 25 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 12 V
Collector current IC0.5 A
Peak collector current ICP 1A
Collector power dissipation PC300 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 025V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 020V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 012V
Collector-base cutoff current (Emitter open)
ICBO VCB = 25 V, IE = 0 100 nA
Forward current transfer ratio *1hFE1 *2VCE = 2 V, IC = 0.5 A 200 800
hFE2 VCE = 2 V, IC = 1 A 60
Collector-emitter saturation voltage *1VCE(sat) IC = 500 mA, IB = 20 mA 0.13 0.40 V
Base-emitter saturation voltage *1VBE(sat) IC = 500 mA, IB = 20 mA 1.2 V
Transition frequency fTVCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 10 pF
(Common base, input open circuited)
ON resistance *3Ron 0.6 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
231
+0.20
–0.10
0.45+0.20
–0.10
7.6
3.0±0.2
(0.8)(0.8)
15.6±0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2:Rank classification
*3:Ron Measurement circuit
Rank R S T No rank
hFE1 200 to 350 300 to 500 400 to 800 200 to 800
VV
1 kΩ
Ron
= VB × 1
000 (Ω)
VA − VB
f = 1 kHz
V = 0.3 V
VB
IB = 1 mA
VA
This product complies with the RoHS Directive (EU 2002/95/EC).