2SD1450
2SJC00222BED
VBE(sat) IChFE ICfT IE
PC TaIC VCE VCE(sat) IC
Cob VCB NV IC
0 16040 12080
500
400
300
200
100
Collector power dissipation PC (mW)Ambient temperature Ta (°C)
012108264
0
2.4
2.0
1.6
1.2
0.8
0.4
Ta = 25°C
IB = 4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
0.01 0.1 1 10
0.01
0.1
1
10
100 I
C
/ I
B
= 25
25°C
−25°C
T
a
= 75°C

Collector-emitter saturation voltage VCE(sat) (V)

Collector current IC (A)
0.01 0.1 1 10
0.01
0.1
1
10
100 I
C
/ I
B
= 10
T
a
= −25°C
25°C
75°C
Base-emitter saturation voltage V
BE(sat)
(V)Collector current I
C
(A)
0.01 0.1 1 10
0
1200
1000
800
600
400
200
VCE = 2 V
Ta = 75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC (A)
− 0.1 −1−10 −100
0
400
300
100
200
V
CB
= 10 V
T
a
= 25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
1 10 100
0
20
16
12
8
4
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)
0.01 0.1 1
0
120
100
80
60
40
20
V
CE
= 10 V
G
V
= 80 dB
Function = FLAT
5 kΩ
R
g
= 100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector current I
C
(mA)

This product complies with the RoHS Directive (EU 2002/95/EC).