2SD1819A
2SJC00226BED
IC VBE IC IBVCE(sat) IC
PC TaIC VCE IB VBE
hFE ICfT IE
0 16040 1208002001601208040Collector power dissipation PC
(mW)Ambient temperature T
a
(°C)
0108264
0
60
50
40
30
20
10
T
a
= 25°C
I
B
= 160 ��A
40 µA
20 µA
60 µA
80 µA
140 µA
120 µA
100 µA
Collector current IC (mA)
Collector-emitter voltage VCE (V)0 1.00.80.2 0.60.4012001000800600400200VCE = 10 VTa = 25°CBase-emitter voltage VBE (V)Base current IB (µA)
0 2.01.60.4 1.20.8
0
200
160
120
80
40
V
CE
= 10 V
T
a
= 75°C−25°C
25°C
Base-emitter voltage VBE
(V)Collector current IC
(mA)0 1000800200 600400
0
240
200
160
120
80
40
V
CE
= 10 V
T
a
= 25°C
Base current IB (µA)Collector current IC
(mA)0.1 1 10 1000.010.1110100 IC
/ IB
= 1025°C−25°CTa
= 75°CCollector-emitter saturation voltage VCE(sat)
(V)Collector current I
C
(mA)
0.1 1 10 1000600500400300200100VCE
= 10 VTa
= 75°C25°C−25°CForward current transfer ratio hFE
Collector current I
C
(mA)
− 0.1 −1−10 −100
0
300
240
120
180
60
V
CB
= 10 V
T
a
= 25°C
Transition frequency f
T
(MHz)
Emitter current IE
(mA)