Transistors

Publication date : October 2008 SJC00425AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1821A

Silicon NPN epitaxial planar type

For high breakdown voltage low-frequency and low-noise
amplification
Features
High collector-emitter voltage (Base open) VCEO
Low noise voltage NV
S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 185 V
Collector-emitter voltage (Base open) VCEO 185 V
Emitter-base voltage (Collector open) VEBO 5 V
Collector current IC50 mA
Peak collector current ICP 100 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 mA, IB = 0 185 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0 1 mA
Forward current transfer ratio *hFE VCE = 5 V, IC = 10 mA 130 330
Collector-emitter saturation voltage VCE(sat) IC = 30 mA, IB = 3 mA 1 V
Transition frequency fTVCB = 10 V, IE = –10 mA, f = 200 MHz 150 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF
Noise voltage
NV VCB = 10 V, IC = 1 mA, GV = 80 dB,
Rg = 100 kΩ, Function = FLAT 150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S
hFE 130 to 220 185 to 330
Package
Code
SMini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: L