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2SD1821A
SMini3-G1
1
3
4
4
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2SD1821A
SJC00425AED
3
This product
complies wi
th the RoHS
Directive (E
U 2002/95/EC
).
SMini3-G1
Unit: mm
(0.65)
1.3
±
0.1
(0.65)
0.3
1.25
±
0.10
(0.425)
2.1
±
0.1
2.0
±
0.2
3
2
1
1
0
°
0.9
±
0.1
0to 0.1
0.9
5
°
0.2
±
0.1
0.15
+0.1
−
0.0
+0.2
−
0.1
+0.10
−
0.05
Contents
Main
Transistors
2SD1821A
Marking Symbol: L
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise amplication Features
Absolute Maximum Ratings Ta = 25C
2SD1821A
2
Base-emitter voltage VBE (V)
Collector output capacitance
Collector-base voltage VCB (V)
SMini3-G1
10