2SD18242SJC00230BED
VCE(sat) IChFE ICfT IE
PC TaIC VCE IC VBE
Cob VCB NV ICNV VCE
0 16040 12080
0
200
160
120
80
40
Collector power dissipation PC (mW)Ambient temperature Ta (°C)012108264
0
80
60
20
40
T
a
= 25°C
20 µA
30 µA
40 µA
50 µA
60 µA
80 µA
10 µA
I
B
= 100 µA
Collector current IC (mA)
Collector-emitter voltage VCE (V)0 2.01.60.4 1.20.8
0
60
50
40
30
20
10
V
CE
= 10 V
T
a
= 75°C−25°C
25°C
Base-emitter voltage VBE
(V)Collector current IC
(mA)0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
= 10
25°C
−25°C
T
a
= 75°C
Collector-emitter saturation voltage VCE(sat)
(V)Collector current IC
(mA)0.1 1 10 100
0
1800
1500
1200
900
600
300
V
CE
= 10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC
(mA)− 0.1 −1−10 −10002001601208040VCB
= 10 VTa
= 25°CTransition frequency fT (MHz)Emitter current IE (mA)
1 10 100
0
6
5
4
3
2
1
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)Collector output capacitance (Common base, input open circuited) Cob
(pF)0.01 0.1 1
0
100
80
60
40
20
V
CE
= 10 V
G
V
= 80 dB
Function = FLAT
T
a
= 25°C
5 kΩ
R
g
= 100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector current IC (mA)1 10 100
0
100
80
60
40
20 I
C
= 1 mA
G
V
= 80 dB
Function = FLAT
T
a
= 25°C
5 kΩ
R
g
= 100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector-emitter voltage VCE
(V)