Panasonic MA36132E manual

Switching Diodes
Publication date: September 2006 SKF00069AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA36132E
Silicon epitaxial planar type
For high speed switching circuits
 Features
 Two elements are contained in one packag e, optimum for high-dens ity
mounting
 Short reverse recovery time trr
 Small terminal capacitance Ct
 Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current IF
150 mA
100 *2
Forward current (Average) IFM
340 mA
225 *2
Non-repetitive peak forward surge current *1IFSM
750 mA
500 *2
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *1: t = 1 s
*2: Value for single diode
 Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 mA 80 V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance CtVR = 0, f = 1 MHz 2 pF
Reverse recovery time *trr
IF = 10 mA, VR = 6 V, Irr = 0.1 IR ,
RL = 100 W3 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Marking Symbol: A2
Internal Connection
Unit: mm
1: Anode 1
2: Anode 2
3: Cathode 1, 2 ML3-N2 Package
0.60±0.05
1.00±0.05
2
1
3
0.39+0.01
−0.03
0.25±0.05 0.25±0.05
0.50±0.05
0.65±0.01
0.15±0.05
2
1
0.35±0.01
0.05±0.03
0.01±0.005
0.05±0.03
3
1
2
3