Panasonic MA3D755 (MA7D55) manual

Schottky Barrier Diodes (SBD)

Publication date: January 2004 SKH00045BED

MA3D755 (MA7D55)

Silicon epitaxial planar type (cathode common)

For switching mode power supply

■Features

•Low forward voltage VF

•High dielectric breakdown voltage: > 5 kV

•Easy-to-mount, due to its V cut lead end

■Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Repetitive peak reverse voltage VRRM 60 V

Forward current (Average) IF(AV) 5A

Non-repetitive peak forward IFSM 90 A

surge current *

Junction temperature Tj−40 to +125 °C

Storage temperature Tstg −40 to +125 °C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage VFIF = 2.5 A 0.58 V

Reverse current IRVR = 60 V 1 mA

Thermal resistance (j-c) Rth(j-c) 3.0 °C/W

■Electrical Characteristics TC = 25°C ± 3°C

Unit: mm

1.4±0.2

1.6±0.2

0.8±0.1 0.55±0.15

2.54±0.30

5.08±0.50

123

2.6±0.1

2.9±0.2

4.6±0.2

φ 3.2±0.1

3.0±0.5

9.9±0.3

15.0±0.513.7±0.2

4.2±0.2

Solder Dip

Note) *:Half sine wave; 10 ms/cycle

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2.Absolute frequency of input and output is 200 MHz.

Note) The part number in the parenthesis shows conventional part number.

1:Anode

2:Cathode

3: Anode

TO-220D-A1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).