Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00054BED
MA3J741 (MA741)
Silicon epitaxial planar type
For switching
■Features
•Mini type of MA3X704A (MA704A)
•Low forward voltage VF and good wave detection efficiency η
•Small temperature coefficient of forward characteristic
•Small reverse current IR
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage
VRM 30 V
Forward current IF30 mA
Peak forward current IFM 150 mA
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °CInternal Connection
Marking Symbol: M1L
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.4 V
VF2 IF = 30 mA 1.0
Reverse current IRVR = 30 V 300 nA
Terminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pF
Reverse recovery time *trr IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
Detection efficiency ηVIN = 3 V(peak) , f = 30 MHz 65 %
RL = 3.9 kΩ, CL = 10 pF
■Electrical Characteristics Ta = 25°C ± 3°C
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
trtp
trr
VR
IF
t
t
A
1 : Anode
2 : N.C.
3 : Cathode
EIAJ: SC-79 SMini3-F1 Package
Unit: mm
0.3
2.0
±0.2
1.3
±0.1
(0.65)
1
3
2
(0.65) 0.9
±0.1
2.1
±0.1
1.25
±0.1
0 to 0.1
(0.15)
(0.425)
5˚
5˚
+0.1
–0
0.15
+0.1
–0.05
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 2 GHz. 4.*: trr measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).