Schottky Barrier Diodes (SBD)

1
Publication date: February 2005 SKH00067CED
MA3SE02

Silicon epitaxial planar type

For cellular phone
■Features
•High-frequency wave detection is possible
•Low forward voltage VF
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta = 25°C
Marking Symbol: M6B
■Electrical Characteristics Ta = 25°C ± 3°C
Internal Connection
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.40 V
VF2 IF = 35 mA 1.0
Reverse current IRVR = 15 V 200 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 1.2 pF
Forward dynamic resistance rfIF = 5 mA 9 Ω
12
3
1:Anode 1
2:Cathode 2
3:Cathode 1
Anode 2
EIAJ: SC-81 SSMini3-F2 Package
Unit: mm
0.28
±0.05
3
12
0.28
±0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3˚
(0.44)(0.44)
0.88
(0.375)
+0.05
–0.03
0.80
±0.05
(0.80)
1.60
±0.05
3˚
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Maximum peak reverse voltage VRM 20 V
Forward current Single IF35 mA
Series 25
Peak forward Single IFM 100 mA
current Series 70
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 2 GHz
This product complies with the RoHS Directive (EU 2002/95/EC).