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MA3SE02 manual
MA3SE02
1
2
3
3
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MA3SE02
SKH00067CED
I
R
V
R
C
t
V
R
10
−
2
10
−
3
01
02
0
10
−
1
1
10
10
2
10
3
Reverse voltage V
R
(
V
)
Reverse current I
R
(
µ
A
)
T
a
=
125
°
C
75
°
C
25
°
C
0
1.2
0.8
0.4
01
0
2
0
Reverse voltage V
R
(
V
)
Terminal capacitance C
t
(
pF
)
T
a
=
25
°
C
This product
complies wit
h the RoHS Di
rective (EU 2
002/95/EC).
Contents
Main
Schottky Barrier Diodes (SBD)
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3SE02
Electrical Characteristics Ta = 25C 3C
Silicon epitaxial planar type
For cellular phone Features
High-frequency wave detection is possible Low forward voltage VF Small terminal capacitance Ct
MA3SE02
This product complies with the RoHS Directive (EU 2002/95/EC).
(pF)
Terminal capacitance C
0
