Multi Chip Discrete

Publication date: January 2008 SJJ00400BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP05C8GG

Silicon NPN epitaxial planar type (Tr)

Silicon epitaxial planar type (CCD load device)

For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
Basic Part Number
2SC3932G + CCD load device
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Tr
Collector-base voltage
(Emitter open) VCBO 30 V
Collector-emitter voltage
(Base open) VCEO 20 V
Emitter-base voltage
(Collector open) VEBO 3 V
Collector current IC50 mA
CCD
load
device
Limiting element voltage Vmax 40 V
Limiting element current Imax 10 mA
Overall
Total power dissipation *PT125 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
Package
Code
SSMini6-F2
Pin Name
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
Marking Symbol: 4V
Internal Connection
3
(G)
(S)
4
1
(E) 2
(B)
(C)
6(D)
5
Tr FET