Panasonic UP05C8GG Electrical Characteristics Ta = 25C3C

UP05C8GG
2 SJJ00400BED
This product complies with the RoHS Directive (EU 2002/95/EC).
 Electrical Characteristics Ta = 25°C±3°C
 Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 mA, IE = 0 30 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 3 V
Base-emitter voltage VBE VCE = 10 V, IC = 2 mA 720 mV
Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 25 250 
Transition frequency *fTVCB = 10 V, IE = -15 mA, f = 200 MHz 800 1 200 MHz
Power gain PG VCB = 10 V, IE = -1 mA, f = 100 MHz 20 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
*: Pulse measurement
 CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current IPVDS = 10 V, VG = 0 3.5 5.5 mA
Output impedance ZOVDS = 10 V, VG = 0 0.05 MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
PT  Ta
Common characteristics chart
0 40 80 120
0
140
120
100
80
40
20
60
Total power dissipation PT (mW)
Ambient temperature Ta (°C)
UN05C8B_PT-Ta
IC  VCE IC  IB IB  VBE
Characteristics charts of Tr
0 42 8 106 12
0
35
30
25
40
5
20
15
10
Collector current IC (mA)
Collector-emitter voltage VCE (V)
UP05C8G_IC-VCE
Ta = 25°C
IB = 300 µA
200 µA
150 µA
100 µA
50 µA
250 µA
0 0.4 0.60.2 1.00.8 1.2
0
50
40
60
10
30
20
Collector current IC (mA)
Base current IB (mA)
UP05C8G_IC-IB
VCE = 10 V
0.40.20.1 0.3 0.5 0.6 0.7 0.8 0.9
0
0
0.7
0.6
0.8
0.2
0.1
0.3
0.5
0.4
Base current IB (mA)
Base-emitter voltage VBE (V)
UP05C8G_IB-VBE
VCE = 10 V
Ta = 25°C