UP05C8PG
2 SJJ00401AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 mA, IE = 0 30 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 3 V
Base-emitter voltage VBE VCE = 10 V, IC = 2 mA 720 mV
Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 100 250
Transition frequency *fTVCB = 10 V, IE = -15 mA, f = 200 MHz 1
300 MHz
Power gain GPVCB = 10 V, IE = -1 mA, f = 100 MHz 20 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
*: Pulse measurement
CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current IPVDS = 8 V, VG = 0 5.0 7.0 mA
Output impedance ZOVDS = V, VG = 0 0.02 MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
PT Ta
Common characteristics chart
IC VCE IC IB IC VBE
Characteristics charts of Tr
0 42 8 106 12
0
18
16
14
20
2
4
12
10
6
8
Collector current IC (mA)
Collector-emitter voltage VCE (V)
UP05C8PG_IC-VCE
Ta = 25°C
IB = 100 µA
60 µA
20µA
40µA
80 µA
0 0.4 0.60.2 0.8 1.0
0
40
30
35
45
5
20
25
15
10
Collector current IC (mA)
Base current IB (mA)
UP05C8PG_IC-IB
VCE = 6 V
0 0.4 0.60.2 1.20.8 1.0 1.4
0
40
50
10
20
30
Collector current IC (mA)
Base-emitter voltage VBE (V)
UP05C8PG_IC-VBE
VCE = 6 V
Ta = 85°C
−25°C
25°C
0 40 80 120
0
140
120
100
80
40
20
60
Total power dissipation PT (mW)
Ambient temperature Ta (°C)
UN05C8PG_PT-Ta