Panasonic UP0KG8D manual

Multi Chip Discrete

Publication date: November 2005 SJJ00334AED 1

UP0KG8D

Silicon epitaxial planar type (SBD)

Silicon PNP epitaxial planar type (Tr)

For digital circuits

 Features

 Two elements incorporated into one package (SBD + Tr)

 Costs can be reduced through downsizing of the equipment and reduction of

the number of parts

 Basic Part Number

 MA2SD24 + UNR31A3

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

SBD

Reverse voltage VR20 V

Repetitive peak reverse voltage VRRM 20 V

Forward current (Average) IF(AV) 200 mA

Peak forward current IFM 300 mA

Non-repetitive peak forward

surge current IFSM 1 A

Collector-base voltage

(Emitter open) VCBO -50 V

Collector-emitter voltage

(Base open) VCEO -50 V

Collector current IC-80 mA

Overall

Total power dissipation PT125 mW

Junction temperature Tj125 °C

Storage temperature Tstg –55 to +125 °C

Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Marking Symbol: 6K

Internal Connection

Unit: mm

1: Anode 4: Collector

2: Base 5: Cathode

3: Emitter SSMini5-F2 Package

–0.02

+0.05

0.20(0.30)

(0.50)

1 2 3

5 4

(0.50)

1.60±0.050.55±0.05

0 to 0.02

0.10 max

1.20±0.05

1.00±0.05

1.60±0.05

0.10±0.02

(0.20)

5°

Display at No.1 lead

1 2

SBD