UP0KG8D
2 SJJ00334AED
Electrical Characteristics Ta = 25°C±3°C SBD
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 200 mA 0.50 0.58 V
Reverse current IRVR = 10 V 0.1 1 mA
Terminal capacitance CtVR = 0 V, f = 1 MHz 25 pF
Reverse recovery time *trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 W3 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Tr2
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = -10 mA, IE = 0 -50 V
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 - 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 - 0.5 mA
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 - 0.1 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 80
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = - 0.3 mA - 0.25 V
Output voltage high-level VOH VCC = -5 V, VB = - 0.5 V, RL = 1 kW-4.9 V
Output voltage low-level VOL VCC = -5 V, VB = -3.5 V, RL = 1 kW- 0.2 V
Input resistance R1-30% 47 +30% kW
Resistance ratio R1 / R20.8 1.0 1.2
Transition frequency fTVCB = -10 V, IE = 2 mA, f = 200 MHz 80 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.