Philips BGA2711

2001 Oct 19 3

Philips Semiconductors Product speciﬁcation

MMIC wideband ampliﬁer BGA2711

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

THERMAL RESISTANCE

CHARACTERISTICS

VS=5V; I

S= 12.6 mA; f = 1 GHz; Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VSDC supply voltage RF input AC coupled −6V

Ssupply current −20 mA

Ptot total power dissipation Ts≤80 °C−200 mW

Tstg storage temperature −65 +150 °C

Tjoperating junction temperature −150 °C

PDmaximum drive power −10 dBm

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to solder

point Ptot = 200 mW; Ts≤80 °C 300 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ISsupply current 10 12.6 16 mA

|s21|2insertion power gain f = 1 GHz −13.1 −dB

f = 2 GHz −13.9 −dB

RLIN return losses input f = 1 GHz −11 −dB

f = 2 GHz −10 −dB

RL OUT return losses output f = 1 GHz −18 −dB

f = 2 GHz −13 −dB

NF noise ﬁgure f = 1 GHz −4.8 −dB

f = 2 GHz −4.8 −dB

BW bandwidth at |s21|2−3 dB below ﬂat gain at 1 GHz −3.6 −GHz

PL(sat) saturated load power f = 1 GHz −2.8 −dBm

f = 2 GHz −0.6 −dBm

PL 1 dB load power at 1 dB gain compression; f = 1 GHz −−0.7 −dBm

at 1 dB gain compression; f = 2 GHz −−1.8 −dBm

IP3(in) input intercept point f = 1 GHz −−4.8 −dBm

f = 2 GHz −−8.5 −dBm

IP3(out) output intercept point f = 1 GHz −8.3 −dBm

f = 2 GHz −5.4 −dBm