Philips BGA2748

2002 Jul 03 3

Philips Semiconductors Product speciﬁcation

MMIC wideband ampliﬁer BGA2748

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

THERMAL RESISTANCE

CHARACTERISTICS

VS=3V; I

S= 5.7 mA; f = 1 GHz; Tj=25°C; unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VSDC supply voltage RF input AC coupled −4V

Ssupply current −15 mA

Ptot total power dissipation Ts≤80 °C−200 mW

Tstg storage temperature −65 +150 °C

Tjoperating junction temperature −150 °C

PDmaximum drive power −10 dBm

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to solder

point Ptot = 200 mW; Ts≤80 °C 300 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ISsupply current 4.5 5.7 8 mA

|s21|2insertion power gain f = 1 GHz −21.8 −dB

f = 2 GHz −18.5 −dB

RLIN return losses input f = 1 GHz −18 −dB

f = 2 GHz −14 −dB

RL OUT return losses output f = 1 GHz −7−dB

f = 2 GHz −8−dB

NF noise ﬁgure f = 1 GHz −1.9 −dB

f = 2 GHz −2.4 −dB

BW bandwidth at |s21|2−3 dB below ﬂat gain at 1 GHz −1.9 −GHz

PL(sat) saturated load power f = 1 GHz −−2.3 −dBm

f = 2 GHz −−3.3 −dBm

PL 1 dB load power at 1 dB gain compression; f = 1 GHz −−9.2 −dBm

at 1 dB gain compression; f = 2 GHz −−10.9 −dBm

IP3(in) input intercept point f = 1 GHz −−23.7 −dBm

f = 2 GHz −−19.9 −dBm

IP3(out) output intercept point f = 1 GHz −−1.9 −dBm

f = 2 GHz −−1.4 −dBm