Philips BGD502

2001 Nov 15 3

Philips Semiconductors Productspeciﬁcation

550 MHz, 18.5 dB gain power doubler ampliﬁer BGD502

CHARACTERISTICS

Table 1 Bandwidth 40 to 550 MHz; VB= 24 V; Tmb =35°C; ZS=Z

L=75Ω.

Notes

1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz.

2. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB;

fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq −fr = 538.25 MHz.

3. The module normally operates at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Gppower gain f = 50 MHz 18 −19 dB

f = 550 MHz 18.8 −20.8 dB

SL slope cable equivalent f = 40 to 550 MHz 0.2 −2.2 dB

FL ﬂatness of frequency response f = 40 to 550 MHz −−±0.3 dB

s11 input return losses f = 40 to 80 MHz 20 −−dB

f = 80 to 160 MHz 19 −−dB

f = 160 to 550 MHz 18 −−dB

s22 output return losses f = 40 to 80 MHz 20 −−dB

f = 80 to 160 MHz 19 −−dB

f = 160 to 550 MHz 18 −−dB

s21 phase response f = 50 MHz +135 −+225 deg

CTB composite triple beat 77 channels ﬂat;

Vo= 44 dBmV;

measured at 547.25 MHz

−−−65 dB

Xmod cross modulation 77 channels ﬂat;

Vo= 44 dBmV;

measured at 55.25 MHz

−−−68 dB

CSO composite second order distortion 77 channels ﬂat;

Vo= 44 dBmV;

measured at 548.5 MHz

−−−62 dB

d2second order distortion note 1 −−−72 dB

Vooutput voltage dim = −60 dB; note 2 64 −−dBmV

NF noise ﬁgure f = 550 MHz −−8dB

tot total current consumption (DC) note 3 −415 435 mA