2001 Nov 14 3
Philips Semiconductors Product specification
860 MHz, 20 dB gain push-pull amplifier BGY885B
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB= 24 V; Tmb =30°C; ZS=Z
L=75Ω
Notes
1. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 805.25 MHz; Vq= 44 dBmV;
measured at fp+f
q= 860.5 MHz.
2. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=V
o
;
f
q= 858.25 MHz; Vq=V
o−6 dB;
fr= 860.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 849.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 50 MHz 19.5 −20.5 dB
f = 860 MHz 20 −−dB
SL slope cable equivalent f = 40 to 860 MHz 0 −2dB
FL flatness of frequency response f = 40 to 860 MHz −−±0.3 dB
s11 input return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 18.5 −−dB
f = 160 to 320 MHz 17 −−dB
f = 320 to 640 MHz 15.5 −−dB
f = 640 to 860 MHz 14 −−dB
s22 output return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 18.5 −−dB
f = 160 to 320 MHz 17 −−dB
f = 320 to 640 MHz 15.5 −−dB
f = 640 to 860 MHz 14 −−dB
s21 phase response f = 50 MHz −45 −+45 deg
CTB composite triple beat 49 channels flat;
Vo= 44 dBmV;
measured at 859.25 MHz
−−−60 dB
CSO composite second order distortion 49 channels flat;
Vo= 44 dBmV;
measured at 860.5 MHz
−−−60 dB
d2second order distortion note 1 −−−68 dB
Vooutput voltage dim =−60 dB; note 2 57.5 59 −dBmV
NF noise figure f = 50 MHz −−5dB
f = 550 MHz −−5.5 dB
f = 650 MHz −−6.5 dB
f = 750 MHz −−6.5 dB
f = 860 MHz −−7.5 dB
Itot total current consumption (DC) note 3 −−235 mA