Philips BUK210-50Y, BUK215-50Y - page 10

Philips Semiconductors Product specification
TOPFET high side switch BUK215-50Y
SMD version of BUK210-50Y
Fig.22. Typical battery to ground clamping voltage.
VBG = f(Tj); parameter IG
Fig.23. Typical battery to load clamping voltage.
VBL = f(Tj); parameter IL; condition IG = 10mA
Fig.24. Typical negative load clamping.
IL = f(VLG); conditions VIG = = 0V, Tj = 25˚C
Fig.25. Typical negative load clamping voltage.
VLG = f(Tj); parameter IL; condition VIG = = 0V
Fig.26. Typical reverse diode characteristic.
IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C
Fig.27. Typical overload characteristic, Tmb = 25 ˚C.
IL = f(VBL); condition VBG = 16 V; parameter tp
50
55
60
65
-50 0 50 100 150 200
Tj / OC
VBG / V
BUK215-50Y
I
G
=
1 mA
200 mA
-30
-25
-20
-15
-10
-50 0 50 100 150 200
Tj / OC
BUK215-50Y
IL =
10 mA
10 A
VLG / V
50
55
60
65
-50 0 50 100 150 200
T
j
/
O
C
BUK215-50Y
I
L
=
1 mA
600 mA
V
BL
/ V
IL / A
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
VBL / V
BUK215-50Y
I
L
/ A
0
5
10
-30 -25 -20 -15 -10
V
LG
/ V
BUK215-50Y
I
L
/ A
0
5
10
15
20
25
30
35
40
45
50
02468101214161820
V
BL
/ V
BUK215-50Y
Short circuit trip = 150us
V
BL(TO)
typ.
current limiting
May 2001 10 Rev 1.010