Philips Semiconductors Product specification
TOPFET dual high side switch BUK218-50DC
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance1
Rth j-mb Junction to mounting base per channel - 2.4 3 K/W
both channels - 1.2 1.5 K/W
STATIC CHARACTERISTICSLimits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Clamping voltages
VBG Battery to ground IG = 1 mA 45 55 65 V
VBL Battery to load per channel IL = IG = 1 mA 50 55 65 V
VGL Ground to load2IL = 10 mA 18 23 28 V
IL = 10 A; tp = 300 µs202530V
Supply voltage battery to ground
VBG Operating range3- 5.5 - 35 V
Currents 9 V ≤ VBG ≤ 35 V
IBTotal quiescent current4VLG = 0 V - - 20 µA
Tmb = 25˚C - 0.1 1 µA
ILOff-state load current per VBL = VBG --10µA
channel Tmb = 25˚C - 0.1 1 µA
IGOperating current one channel on - 1.8 3 mA
both channels on - 3.6 6 mA
ILNominal load current5VBL = 0.5 V; Tmb = 85˚C 8 - - A
RGEffective internal ground IG = -200 mA; tp = 300 µs 40 75 100 Ω
resistance6
Resistances per channel VBG ILtp7Tj
RON On-state resistance 9 to 35 V 10 A 300 µs 25˚C - 30 40 mΩ
150˚C - 60 80 mΩ
RON On-state resistance 5.5 V 5 A 300 µs 25˚C - 50 60 mΩ
150˚C - 100 120 mΩ
1 Of the output Power MOS transistors.
2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
3 On-state resistance is increased if the supply voltage is less than 7 V.
4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.
5 Per channel but with both channels conducting. Defined as in ISO 10483-1.
6 Equivalent of the parallel connected resistors for both channels.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
October 2001 3 Rev 2.010