Philips BZA800AL Series, MBD127

2002 Jan 11 3

Philips Semiconductors Product speciﬁcation

Quadruple ESD transient voltage suppressor BZA800AL series

THERMAL CHARACTERISTICS

Note

1. Solder point of common anode (pin 2).

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rthj-a thermal resistance from junction to ambient all diodes loaded 410 K/W

Rthj-s thermalresistance from junction to solder point;

note 1 one diode loaded 200 K/W

all diodes loaded 185 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VFforward voltage IF= 200 mA −−1.3 V

IRreverse current

BZA856AL VR=3V −−1000 nA

BZA862AL VR=4V −−500 nA

BZA868AL VR= 4.3 V −−100 nA

VZworking voltage IZ=1mA

BZA856AL 5.32 5.6 5.88 V

BZA862AL 5.89 6.2 6.51 V

BZA868AL 6.46 6.8 7.14 V

rdif differential resistance IZ=1mA

BZA856AL −−400 Ω

BZA862AL −−300 Ω

BZA868AL −−200 Ω

SZtemperature coefﬁcient IZ=1mA

BZA856AL −0.3 −mV/K

BZA862AL −1.6 −mV/K

BZA868AL −2.2 −mV/K

Cddiode capacitance f = 1MHz; VR=0

BZA856AL −−125 pF

BZA862AL −−105 pF

BZA868AL −−90 pF

IZSM non-repetitive peak reverse current tp= 1ms; Tamb =25°C

BZA856AL −−2.2 A

BZA862AL −−2.1 A

BZA868AL −−2A