Philips PIP3207-DC TOPFET dual high side switch PIP3207-DC

Philips Semiconductors Product specification

TOPFET dual high side switch PIP3207-DC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance1

Rth j-mb Junction to mounting base per channel - 2.4 3 K/W

both channels - 1.2 1.5 K/W

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Clamping voltages

VBG Battery to ground IG = 1 mA 45 55 65 V

VBL Battery to load per channel IL = IG = 1 mA 50 55 65 V

VGL Ground to load2IL = 10 mA 18 23 28 V

IL = 10 A; tp = 300 µs202530V

Supply voltage battery to ground

VBG Operating range3- 5.5 - 35 V

Currents 9 V ≤ VBG ≤ 35 V

IBTotal quiescent current4VLG = 0 V - - 20 µA

Tmb = 25˚C - 0.1 1 µA

ILOff-state load current per VBL = VBG --10µA

channel Tmb = 25˚C - 0.1 1 µA

IGOperating current one channel on - 1.8 3 mA

both channels on - 3.6 6 mA

ILNominal load current5VBL = 0.5 V; Tmb = 85˚C 8 - - A

RGEffective internal ground IG = -200 mA; tp = 300 µs 40 75 100 Ω

resistance6

Resistances per channel VBG ILtp7Tj

RON On-state resistance 9 to 35 V 10 A 300 µs 25˚C - 30 40 mΩ

150˚C - 60 80 mΩ

RON On-state resistance 5.5 V 5 A 300 µs 25˚C - 50 60 mΩ

150˚C - 100 120 mΩ

1 Of the output Power MOS transistors.

2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage

is clamped by the device.

3 On-state resistance is increased if the supply voltage is less than 7 V.

4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.

5 Per channel but with both channels conducting. Defined as in ISO 10483-1.

6 Equivalent of the parallel connected resistors for both channels.

7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

September 2001 3 Rev 1.100