Philips NE5512, SA5512, SE5512 NE/SA/SE5512Dual high-performance operational amplifier

Philips Semiconductors Linear Products Product specification
NE/SA/SE5512Dual high-performance operational amplifier
August 31, 1994 80
ELECTRICAL PERFORMANCE CHARACTERISTICS
VCC = ±15V, TA = 25°C over temperature range, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5512 NE/SA5512
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max Min Typ Max
UNIT
VOS Input offset voltage RS=100Ω
TA=+25°C
Over temp. 0.7 12 31 1.5 5 6mV
∆VOS/∆T 4 5 µV/°C
IOS Input offset current RS=100kΩ
TA=+25°C
Over temp. 3 410 20 6 820 30 nA
∆IOS/∆T 30 40 pA/°C
IBIAS Input bias current RS=100kΩ
TA=+25°C
Over temp. 3 410 20 6 820 30 nA
∆IBIAS/∆T 30 40 pA/°C
RIN Input resistance differential TA=+25°C 100 100 MΩ
VCM Input common mode range TA=+25°C
Over temp. ±13.5 ±13 ±13.7 ±13.2 ±13.5 ±13 ±13.7 ±13.2 V
CMRR
Input common-mode rejection
ratio
VCC=±15V
VIN=±13.5V
CMRR
Input common-mode rejection
ratio
TA=+25°C 70 100 70 100 dB
ratio
VIN=±13V
Over temp.
AVLarge-signal voltage gain RL=2kΩ TA=25°C
VO=±10V over temp.
50
25 200 50 25 200 V/mV
SR Slew rate TA=25°C 0.6 1 1 V/µs
GBW Small-signal unity gain band-
width TA=25°C 3 3 MHz
θMPhase margin TA=25°C 45 45 degree
VOUT Output voltage swing RL=2kΩ
TA=25°C
Over temp.
±13
±12.5
±13.5
±13
±13
±12.5
±13.5
±13 V
VOUT Output voltage swing RL=600Ω1 TA=25°C
Over temp.
±10
±7.5
±11.5
±9
±10
±8
±11.5
±9V
ICC Power supply current RL=Open
TA=25°C
Over temp. 3.4 3.6 5 5.5 3.4 3.6 5 5.5 mA
PSRR Power supply rejection ratio Over temp. 80 100 80 100 dB
AA Amplifier-to-amplifier coupling f=1kHz to 20kHz,
TA=25°C -120 -120 dB
THD Total harmonic distortion f=10kHz
TA=25°C
VO=7VRMS
0.01 0.01 %
VNOISE Input noise voltage f=1kHz
TA=25°C30 30 nV/√Hz
INOISE Input noise current f=1kHz
TA=25°C0.2 0.2 pA/√Hz
ISC Short-circuit current ±15V, TA=25°C 40 40 mA
NOTES:
1. Not to exceed maximum package power dissipation.