1997 Aug 14 9
Philips Semiconductors Preliminary specification
2×23 W high efficiency car radio power
amplifier TDA1561Q
AC CHARACTERISTICS
VP= 14.4V; RL=4Ω; C11= 1000 µF; f = 1kHz; Tamb =25°C; measured in Fig.6; unless otherwise specified.
Notes
1. The distortion is measured with a bandwidth of 10 Hzto 30 kHz.
2. Frequency response externally fixed (input capacitors determine low frequency roll-off).
3. The SE to BTL switch voltage level depends on VP.
4. Noise output voltage measured with a bandwidth of 20 Hzto 20 kHz.
5. Noise output voltage is independent of Rs (see Fig.6)(Vi= 0 V).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pooutput power THD =1% 15 18 −W
THD = 10% 21 23 −W
EIAJ −36 −W
VP= 13.2V; THD =0.5% −14 −W
VP= 13.2V; THD =10% −20 −W
THD total harmonic distortion Po= 1W; f =1 kHz; note 1 −0.1 −%
Pddissipated power see Figs 9 and10 W
Bppower bandwidth THD =1%; Po=−1dB
with respect to 15 W
−20 to
15000
−Hz
fro(l) low frequency roll-off −1 dB; note2 −25 −Hz
fro(h) high frequency roll-off −1 dB 130 −−kHz
Gvclosed loop voltage gain 31 32 33 dB
SVRR supply voltage ripple rejection Rs=0Ω; Vripple = 2 V (p-p)
on; f =1 kHz 45 60 −dB
mute; f =1 kHz −90 −dB
standby; f =100 Hz to10 kHz 80 −−dB
CMRR common mode rejection ratio Rs=0Ω; f= 1kHz −80 −dB
Ziinput impedance 45 60 75 kΩ
∆Zimismatch in input impedance −1−%
VSE-BTL SE to BTL switch voltage level note3 −3−V
Voutoutput voltage-mute (RMS value) Vi= 1 V (RMS) −50 100 µV
Vn(o) noise output voltage on; Rs=0Ω; note 4 −160 300 µV
on; Rs=10kΩ; note4 −170 −µV
mute; note 5 −20 −µV
α
cs channel separation Rs=0Ω40 60 −dB
∆Gvchannel unbalance −−1dB