1995 May 08 7
Philips Semiconductors Product specification
2× 6 W hi-fi audio power amplifier TDA2615
Notes
1. VP=±12 V; RL=8Ω; Tamb =25°C; fi= 1 kHz; symmetrical power supply IMUTE =< 30 µA (see Fig.4).
2. The power bandwidth is measured at a maximum output power (POmax) of −3 dB.
3. The noise output voltage (RMS value) is measured at RS=2kΩ, unweighted (20 Hz to 20 kHz).
4. The ripple rejection is measured at RS= 0 and fi= 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase
to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at
fi= 1 kHz.
5. ±VP= 4 V; RL=8Ω; Tamb =25°C; fi= 1 kHz; symmetrical power supply (see Fig.4).
6. VP= 24 V; RL=8Ω; Tamb =25°C; fi= 1 kHz; asymmetrical power supply IMUTE <30 µA (see Fig.5).
7. The internal network at pin 2 is a resistor divider of typical 4 kΩ and 5 kΩ to the positive supply rail. At the connection
of the 4 kΩ and 5 kΩ resistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread
of the zener voltage is 6.1 to 7.1 V.
Operating position; note 6
Iq(tot) total quiescent current 18 40 70 mA
POoutput power THD = 0.5% 5 6 −W
THD = 10% 6.5 8 −W
THD total harmonic distortion PO=4W −0.13 0.2 %
B power bandwidth THD = 0.5%; note 1 −40 to 20000 −Hz
Gvvoltage gain 29 30 31 dB
Gvgain unbalance −0.2 1 dB
Vno noise output voltage note 3 −70 140 µV
Ziinput impedance 14 20 26 kΩ
SVRR supply voltage ripple rejection 35 44 −dB
αcs channel separation −45 −dB
MUTE POSITION (IMUTE ≥300 µA)
VOoutput voltage VI= 600 mV −0.3 1.0 mV
Z2−7mute input impedance note 7 6.7 9 11.3 kΩ
Iq(tot) total quiescent current 18 40 70 mA
Vno noise output voltage note 3 −70 140 µV
SVRR supply voltage ripple rejection note 4 35 44 −dB
∆Voffof fset voltage with respect to operating
position −4 150 mV
I2current if pin 2 is connected to pin 5 −− 6mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT