July 1994 7
Philips Semiconductors Product specification
2 x 12 W hi-fi audio power amplifiers with
mute TDA2616/TDA2616Q
Notes to the characteristics
1. VP = ±16 V; RL = 8; Tamb = 25 °C; f = 1 kHz; symmetrical power supply IMUTE < 30 µA. See Fig.4
2. The power bandwidth is measured at an output power of PO max3 dB
3. The noise output voltage (RMS value) is measured at RS = 2 k, unweighted (20 Hz to 20 kHz)
4. The ripple rejection is measured at RS = 0 and f = 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase
to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at
f = 1 kHz
5. ±VP = 4 V; RL = 8 ; Tamb = 25 °C; f = 1 kHz; symmetrical power supply. See Fig.4
6. VP = 24 V; RL = 8 ; Tamb = 25 °C; f = 1 kHz; asymmetrical power supply IMUTE < 30 µA. See Fig.5
7. The internal network at pin 2 is a resistor devider of typical 4 kand 5 kto the positive supply rail. At the connection
of the 4 kand 5 kresistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread
of the zener voltage is 6.1 to 7.1 V.
∆VGNDDC output offset voltage 40 200 mV
Operating position; note 6
IPtotal quiescent current 18 40 70 mA
POoutput power
THD = 0.5% 5 6 W
THD = 10% 6.5 8 W
THD = 0.5%; RL = 4 Ω−10 W
THD = 10%; RL = 4 Ω−14 W
THD total harmonic distortion PO = 4 W 0.13 0.2 %
B power bandwidth THD = 0.5%; note 2 40 to
20 000
Hz
Gvvoltage gain 29 30 31 dB
Gvgain unbalance 0.2 1 dB
Vno noise output voltage note 3 70 140 µV
Ziinput impedance 14 20 26 k
SVRR supply voltage ripple rejection 35 44 dB
αchannel separation 45 dB
MUTE POSITION (IMUTE300 µA)
VOoutput voltage VI = 600 mV 0.3 1.0 mV
Z2-7 mute input impedance note 7 6.7 9 11.3 k
IPtotal quiescent current 18 40 70 mA
Vno noise output voltage note 3 70 140 µV
SVRR supply voltage ripple rejection note 4 35 44 dB
∆Voffoffset voltage with respect to operating
position
4 150 mV
I2current if pin 2 is connected to pin 5 −− 8.2 mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT