1995 Feb 07 6
Philips Semiconductors Preliminary specification
Video output amplifier TDA6101Q
CHARACTERISTICS
Operating range: Tamb =−20 to 65 °C; VDDH = 180 to 210 V; VDDL = 10.8 to 13.2 V; Vip = 2.6 to 5 V;
Vom =1.4VtoV
DDL.
Test conditions (unless otherwise specified): Tamb =25°C; VDDH = 200 V ; VDDL = 12 V ; Vip =5V; V
om =6V; C
L=10pF
(CL consists of parasitic and cathode capacitance); measured in test circuit Fig.3.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDDH quiescent HIGH voltage supply current Voc = 0.5VDDH 3.5 4.4 5.5 mA
IDDL quiescent LOW voltage supply current Voc = 0.5VDDH 2.2 2.8 3.5 mA
Ibias input bias current Voc = 0.5VDDH 0−20 µA
Ioffset input offset current Voc = 0.5VDDH −3−+3 µA
Iom(offset) offset current of measurement output Ioc =0µA;
−1.0V<V
1−3< 1.0 V;
1.4 V < Vom <V
DDL
−50+5µA
linearity of current transfer −10 µA<I
oc < 3 mA;
−1.0V<V
1−3< 1.0 V;
1.4 V < Vom <V
DDL
0.9 1.0 1.1
Voffset input offset voltage Voc = 0.5VDDH −50 −+50 mV
Voc(min) minimum output voltage V1−3=−1V −−20 V
Voc(max) maximum output voltage V1−3=−1V V
DDH −12 −−V
GB gain-bandwidth product of open-loop
gain: Vfb /V
i, dm
f = 500 kHz; VocDC = 100 V −0.8 −GHz
BSsmall signal bandwidth VocAC = 60 V (p-p);
VocDC = 100 V 79−MHz
BLlarge signal bandwidth VocAC = 100 V (p-p);
VocDC = 100 V 5.5 7 −MHz
tpd cathode output propagation delay time
50% input to 50% output VocAC = 100 V (p-p);
VocDC = 100 V square
wave; f < 1 MHz;
tr=t
f=40ns;
see Figs 4 and 5
27 38 49 ns
trcathode output rise time 10% output to
90% output Voc = 50 to 150 V square
wave; f < 1 MHz; tf= 40 ns;
see Fig.4
43 55 68 ns
tfcathode output fall time 90% output to
10% output Voc = 150 to 50 V square
wave; f < 1 MHz; tr= 40 ns;
see Fig.5
43 55 68 ns
tssettling time 50% input to
(99% < output < 101%) VocAC = 100 V (p-p);
VocDC = 100 V square
wave; f < 1 MHz;
tr=t
f=40ns;
see Figs 4 and 5
−−350 ns
SR slew rate between 50 V to 150 V V1−3= 2 V (p-p) square
wave; f < 1 MHz;
tr=t
f=40ns
−1700 −V/µs
∆Iom
∆Ioc
------------