Philips TDA6111Q Handling MOS Devices, SNW-FQ-611 part E, Quality reference handbook

1995 Feb 07 5
Philips Semiconductors Preliminary specification
Video output amplifier TDA6111Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134). Voltages measured with respect to GND (pin 4);
currents as specified in Fig.1; unless otherwise specified.
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see
“Handling MOS Devices” ).
QUALITY SPECIFICATION
Quality specification
“SNW-FQ-611 part E” is applicable, except for ESD Human body model see Chapter “Limiting
values”, and can be found in the “Quality reference handbook” (ordering number 9398 510 63011).
THERMAL CHARACTERISTICS
Note
1. External heatsink is required.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDDH high level supply voltage 0 250 V
VDDL low level supply voltage 0 14 V
VIinput voltage 0 VDDL V
VIdm differential mode input voltage −6+6V
V
om measurement output voltage 0 VDDL
Voc cathode output voltage VDDL VDDH V
Vfb feedback output voltage VDDL VDDH V
Iin,Iip input current 0 1 mA
IocsmL low non-repetitive peak cathode
output current flashover discharge = 100 µC05A
I
ocsmH high non-repetitive peak cathode
output current flashover discharge = 100 nC 0 10 A
Ptot total power dissipation 0 4 W
Tstg storage temperature −55 +150 °C
Tjjunction temperature −20 +150 °C
Ves electrostatic handling
human body model (HBM) −> 1500 V
machine model (MM) −> 400 V
SYMBOL PARAMETER VALUE UNIT
Rthj-c thermal resistance from junction to case (note 1) 12 K/W