Philips TEA1104, TEA1104T

1996 Feb 26 9

Philips Semiconductors Objective speciﬁcation

Cost effective battery monitor and fast

charge IC for NiCd and NiMH chargers TEA1104; TEA1104T

CHARACTERISTICS

VP= 10 V; Tamb=25°C; Rref =33kΩ;C

OSC = 1 nF; unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

VPsupply voltage 5.45 −11.5 V

∆VP/∆t supply voltage start rate −− 0.5 V/µs

Vclamp clamping voltage Iclamp =25mA 11.5 −12.8 V

Vstart start-up voltage 6.1 6.4 6.7 V

Vpd power-down voltage level 4.65 5.05 5.45 V

IPsupply current outputs off −− 3mA

start start-up current VP=4V −45 50 µA

VSstabilized voltage IS=1 mA 4.03 4.25 4.46 V

VRref voltage range at reference resistor IRref =20µA 1.18 1.25 1.31 V

TCVref temperature coefﬁcient of the

reference voltage Tamb= 0 to 45 °C−±60 ±120 ppm/K

IRref current range of the reference

resistor 10 −100 µA

Temperature related input; NTC

Vi(co) input voltage level for detecting

temperature cut-off 0.75 0.81 0.87 V

Vi(co; max) maximum input voltage level for

detecting temperature cut-off 0.92 1.0 1.08 V

Vi(co; min) minimum input voltage level for

detecting temperature cut-off 1.85 2.0 2.15 V

INTC input current VNTC = 1.5 V −5−+5 µA

Output drivers

δLED LED pulse duty factor 2.4 2.5 2.6 %

VLED(sat) LED saturation voltage ILED(sat) =15mA −−600 mV

ILI(LED) LED input leakage current VLED=15V −−5µA

Battery monitor

Ii(bat) input battery current Vbat = 2.4 V −1−nA

Vbat voltage range for peak detection 0.81 −3.6 V

∆Vbat/Vbat peak detection level with respect to

top level Vbat=2V −0.25 −%

Tjtemperature range of peak

detection 0−50 °C

Protections; BAT

Vbat(l) low level battery protection voltage −0.81 0.91 V

Vbat(h) high level battery protection voltage 3.5 3.6 4.5 V

Oscillator

k correction factor 0.84 0.93 1.02

fosc frequency range 10 −100 kHz