HD74CBT1G126
Rev.1.00 Apr 07, 2006 page 3 of 6
(Ta = −40 to 85°C)
Item Symbol VCC (V) Min Typ *1 Max Unit Test conditions
Clamp diode voltage VIK 4.5 −1.2 V IIN = −18 mA
VIH 4.0 to 5.5 2.0 Input voltage
VIL 4.0 to 5.5 0.8
V
4.0 14 20 VIN = 2.4 V, IIN = 15 mA
Typ at VCC = 4.0 V
4.5 5 7 VIN = 0 V, IIN = 64 mA
4.5 5 7 VIN = 0 V, IIN = 30 mA
On-state switch resistance *2 R
ON
4.5 10 15
Ω
VIN = 2.4 V, IIN = 15 mA
Input current IIN 0 to 5.5 ±1.0 µA VIN = 5.5 V or GND
Off-state leakage current IOZ 5.5 ±1.0 µA 0 ≤ A, B ≤ VCC
Quiescent supply current ICC 5.5 1.0 µA VIN = VCC or GND, IO = 0 mA
Increase in ICC per input *3 ∆ICC 5.5 2.5 mA
One input at 3.4 V,
other inputs at VCC or GND
Notes: For condition shown as Min or Max use the appropriate values under recommended operating conditions.
1. All typical values are at VCC = 5 V (unless otherwise noted), Ta = 25°C.
2. Measured by the voltage drop between the A and B terminals at the indicated current through the switch.
On-state resistance is determined by the lower voltage of the two (A or B) terminals.
3. This is the increase in supply current for each input that is at the specified TTL voltage level rather than VCC
or GND.
(Ta = 25°C)
Item Symbol VCC (V) Min Typ Max Unit Test conditions
Control input capacitance CIN 5.0 3 pF VIN = 0 or 3 V
Input / output capacitance CI/O (OFF) 5.0 5 pF VO = 0 or 3 V, OE = VCC
Note: This parameter is determined by device characterization is not production tested.